GT30J121(Q)
IGBT 600V 30A 170W TO3PN
part Number：
GT30J121(Q)
Alternative Model：
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
Single IGBTs >
describe：
IGBT 600V 30A 170W TO3PN
RoHS：
YES
：
GT30J121(Q) specifications
Mounting Type：
Through Hole
Voltage - Collector Emitter Breakdown (Max)：
600 V
Package / Case：
TO-3P-3, SC-65-3
Input Type：
Standard
Current - Collector Pulsed (Icm)：
60 A
Current - Collector (Ic) (Max)：
30 A
Supplier Device Package：
TO-3P(N)
Power - Max：
170 W
Vce(on) (Max) @ Vge, Ic：
2.45V @ 15V, 30A
Td (on/off) @ 25°C：
90ns/300ns
Switching Energy：
1mJ (on), 800µJ (off)
Test Condition：
300V, 30A, 24Ohm, 15V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1657
quantity
unit price
International prices
1
3.6
3.6
10
3.01
30.1
25
2.85
71.25
100
2.44
244
300
2.3
690
500
2.17
1085
1000
1.86
1860
2400
1.75
4200
4900
1.68
8232
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