SGS5N60RUFDTU
IGBT 600V 8A 35W TO220F
part Number：
SGS5N60RUFDTU
Alternative Model：
manufacturer：
Sanyo Semiconductor/onsemi
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
Single IGBTs >
describe：
IGBT 600V 8A 35W TO220F
RoHS：
NO
SGS5N60RUFDTU specifications
Mounting Type：
Through Hole
Operating Temperature：
-55°C ~ 150°C (TJ)
Voltage - Collector Emitter Breakdown (Max)：
600 V
Input Type：
Standard
Package / Case：
TO-220-3 Full Pack
Current - Collector (Ic) (Max)：
8 A
Supplier Device Package：
TO-220F-3
Power - Max：
35 W
Reverse Recovery Time (trr)：
55 ns
Current - Collector Pulsed (Icm)：
15 A
Vce(on) (Max) @ Vge, Ic：
2.8V @ 15V, 5A
Switching Energy：
88µJ (on), 107µJ (off)
Gate Charge：
16 nC
Td (on/off) @ 25°C：
13ns/34ns
Test Condition：
300V, 5A, 40Ohm, 15V
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Standard Pack Quantity：1600
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