SI7113DN-T1-E3
MOSFET P-CH 100V 13.2A PPAK
part Number:
SI7113DN-T1-E3
Alternative Model:
SI7113DN-T1-GE3,CPC1114N,SISS71DN-T1-GE3,BAT43W-E3-08,CXP-3R0224R-TWX,SI7113ADN-T1-GE3,INN3166C-H102-TL,DFLS1100-7,EVP-BK4A1B000,MMBT2907AWT1G,AO3442,DMN10H120SFG-13,UPS5819E3/TR7,TCMT1107,PMV280ENEAR
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET P-CH 100V 13.2A PPAK
RoHS:
YES
SI7113DN-T1-E3 specifications
Mounting Type:
Surface Mount
Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Drain to Source Voltage (Vdss):
100 V
FET Type:
P-Channel
Operating Temperature:
-50°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id:
3V @ 250µA
Supplier Device Package:
PowerPAK® 1212-8
Package / Case:
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:
55 nC @ 10 V
Power Dissipation (Max):
3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1480 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C:
13.2A (Tc)
Rds On (Max) @ Id, Vgs:
134mOhm @ 4A, 10V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:18197
quantity
unit price
International prices
3000
1.39
4170
6000
1.34
8040
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