NTD6600N-1G
MOSFET N-CH 100V 12A IPAK
part Number:
NTD6600N-1G
manufacturer:
Sanyo Semiconductor/onsemi
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 100V 12A IPAK
RoHS:
NO
NTD6600N-1G specifications
Mounting Type:
Through Hole
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Vgs (Max):
±20V
Drain to Source Voltage (Vdss):
100 V
Operating Temperature:
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id:
2V @ 250µA
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Drive Voltage (Max Rds On, Min Rds On):
5V
Supplier Device Package:
IPAK
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds:
700 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Rds On (Max) @ Id, Vgs:
146mOhm @ 6A, 5V
Power Dissipation (Max):
1.28W (Ta), 56.6W (Tc)
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
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