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SI7686DP-T1-GE3
MOSFET N-CH 30V 35A PPAK SO-8
part Number：
SI7686DP-T1-GE3
Alternative Model：
APT1608SURCK  ,  APT1608CGCK  ,  PI4ULS3V4857GEAEX  ,  ZL30274LDG1  ,  88E1512-A0-NNP2I000  ,  SIC473ED-T1-GE3  ,  BSS816NWH6327XTSA1  ,  ECS-2520S18-250-FN-TR  ,  TPS22969DNYR  ,  SIA459EDJ-T1-GE3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET N-CH 30V 35A PPAK SO-8
RoHS：
YES
：
SI7686DP-T1-GE3     SI7686DP-T1-GE3     SI7686DP-T1-GE3    
SI7686DP-T1-GE3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
30 V
Vgs(th) (Max) @ Id：
3V @ 250µA
Supplier Device Package：
PowerPAK® SO-8
Package / Case：
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C：
35A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
1220 pF @ 15 V
Rds On (Max) @ Id, Vgs：
9.5mOhm @ 13.8A, 10V
Power Dissipation (Max)：
5W (Ta), 37.9W (Tc)
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1927
quantity
unit price
International prices
3000
0.76
2280
6000
0.73
4380
9000
0.7
6300
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