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SI2303CDS-T1-GE3
MOSFET P-CH 30V 2.7A SOT23-3
part Number：
SI2303CDS-T1-GE3
Alternative Model：
SI2304DDS-T1-GE3  ,  STPS5L60S  ,  SI2301CDS-T1-GE3  ,  DNBT8105-7  ,  SI2318DS-T1-E3  ,  IRF7341TRPBF  ,  TB6559FG  ,  8  ,  EL  ,  SI2303  ,  A4979GLPTR-T  ,  ADC104S021CIMMX/NOPB  ,  LI0805H151R-10  ,  SI2303CDS-T1-BE3  ,  TPS62175DQCT  ,  B340A-13-F  ,  5M80ZE64C5N
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET P-CH 30V 2.7A SOT23-3
RoHS：
YES
：
SI2303CDS-T1-GE3     SI2303CDS-T1-GE3     SI2303CDS-T1-GE3     SI2303CDS-T1-GE3    
SI2303CDS-T1-GE3 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Package / Case：
TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss)：
30 V
Vgs(th) (Max) @ Id：
3V @ 250µA
Supplier Device Package：
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C：
2.7A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
8 nC @ 10 V
Rds On (Max) @ Id, Vgs：
190mOhm @ 1.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
155 pF @ 15 V
Power Dissipation (Max)：
1W (Ta), 2.3W (Tc)
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：15185
quantity
unit price
International prices
3000
0.17
510
6000
0.15
900
9000
0.14
1260
30000
0.14
4200
75000
0.13
9750
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