SIA813DJ-T1-GE3
MOSFET P-CH 20V 4.5A PPAK SC70-6
part Number：
SIA813DJ-T1-GE3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 20V 4.5A PPAK SC70-6
RoHS：
YES
SIA813DJ-T1-GE3 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±8V
Vgs(th) (Max) @ Id：
1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)：
1.8V, 4.5V
FET Feature：
Schottky Diode (Isolated)
Current - Continuous Drain (Id) @ 25°C：
4.5A (Tc)
Package / Case：
PowerPAK® SC-70-6 Dual
Supplier Device Package：
PowerPAK® SC-70-6 Dual
Power Dissipation (Max)：
1.9W (Ta), 6.5W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
13 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds：
355 pF @ 10 V
Rds On (Max) @ Id, Vgs：
94mOhm @ 2.8A, 4.5V
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Standard Pack Quantity：1600
quantity
unit price
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