IXTY1R4N100P
MOSFET N-CH 1000V 1.4A TO252
part Number：
IXTY1R4N100P
manufacturer：
Wickmann / Littelfuse
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 1000V 1.4A TO252
RoHS：
YES
IXTY1R4N100P specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
1000 V
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：
TO-252AA
Current - Continuous Drain (Id) @ 25°C：
1.4A (Tc)
Vgs(th) (Max) @ Id：
4.5V @ 50µA
Power Dissipation (Max)：
63W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
450 pF @ 25 V
Rds On (Max) @ Id, Vgs：
11Ohm @ 500mA, 10V
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Quick inquiry
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Standard Pack Quantity：1600
quantity
unit price
International prices
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