SI2306BDS-T1-GE3
MOSFET N-CH 30V 3.16A SOT23-3
part Number：
SI2306BDS-T1-GE3
Alternative Model：
NL27WZ04DTT1G , 4820-3000-CP , 1N4148WT , PPTC201LFBN-RC , HSMG-C190 , CM1213A-04S7 , PTS830GM140 SMTR LFS , T520B107M006ATE025 , SI2306BDS-T1-BE3 , CSD17304Q3 , SN74LVC1G07DBVT , LM3478MA/NOPB , DF40HC(3.0)-100DS-0.4V(58) , MAX4674ESE+ , 2250477-1
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 30V 3.16A SOT23-3
RoHS：
YES
SI2306BDS-T1-GE3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss)：
30 V
Vgs(th) (Max) @ Id：
3V @ 250µA
Supplier Device Package：
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C：
3.16A (Ta)
Rds On (Max) @ Id, Vgs：
47mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs：
4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds：
305 pF @ 15 V
Power Dissipation (Max)：
750mW (Ta)
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
3000
0.21
630
6000
0.2
1200
9000
0.19
1710
30000
0.19
5700
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