SI4686DY-T1-GE3
MOSFET N-CH 30V 18.2A 8SO
part Number：
SI4686DY-T1-GE3
Alternative Model：
SI4420BDY-T1-E3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 30V 18.2A 8SO
RoHS：
YES
SI4686DY-T1-GE3 specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
30 V
Vgs(th) (Max) @ Id：
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
1220 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C：
18.2A (Tc)
Rds On (Max) @ Id, Vgs：
9.5mOhm @ 13.8A, 10V
Power Dissipation (Max)：
3W (Ta), 5.2W (Tc)
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：7879
quantity
unit price
International prices
2500
0.68
1700
5000
0.65
3250
12500
0.62
7750
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