SI4816BDY-T1-GE3

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SI4816BDY-T1-GE3

MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC

part Number：

SI4816BDY-T1-GE3

Alternative Model：

IRF7904TRPBF , NCV7520MWTXG , SIS892DN-T1-GE3 , SI4090DY-T1-GE3 , SISB46DN-T1-GE3 , FS32K144WAT0WLHT , NCP59744MN2ADJTBG , SUM70101EL-GE3 , NSVR351SDSA3T1G , NTTFS5116PLTAG , SISS71DN-T1-GE3 , NCP51705MNTXG , SI7157DP-T1-GE3 , SI4532CDY-T1-GE3 , PI7C9X113SLFDE

manufacturer：

Vishay / Siliconix

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC

RoHS：

YES

：

SI4816BDY-T1-GE3 SI4816BDY-T1-GE3

SI4816BDY-T1-GE3 specifications

Mounting Type：

Surface Mount

Supplier Device Package：

8-SOIC

Package / Case：

8-SOIC (0.154", 3.90mm Width)

Technology：

MOSFET (Metal Oxide)

FET Feature：

Logic Level Gate

Drain to Source Voltage (Vdss)：

30V

Operating Temperature：

-55°C ~ 150°C (TJ)

Configuration：

2 N-Channel (Half Bridge)

Vgs(th) (Max) @ Id：

3V @ 250µA

Power - Max：

1W, 1.25W

Gate Charge (Qg) (Max) @ Vgs：

10nC @ 5V

Current - Continuous Drain (Id) @ 25°C：

5.8A, 8.2A

Rds On (Max) @ Id, Vgs：

18.5mOhm @ 6.8A, 10V

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Quick inquiry

Manufacturer's standard delivery time：be pending

Standard Pack Quantity：2811

quantity

unit price

International prices

2500

0.78

1950

5000

0.76

3800

12500

0.73

9125

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