SI7112DN-T1-GE3
MOSFET N-CH 30V 11.3A PPAK1212-8
part Number：
SI7112DN-T1-GE3
Alternative Model：
PMN20ENAX,SSM6K405TU,LF,APFA3010SURKCGKSYKC,AFM906NT1,AO3415A
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 30V 11.3A PPAK1212-8
RoHS：
YES
SI7112DN-T1-GE3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Power Dissipation (Max)：
1.5W (Ta)
Drain to Source Voltage (Vdss)：
30 V
Operating Temperature：
-50°C ~ 150°C (TJ)
Supplier Device Package：
PowerPAK® 1212-8
Package / Case：
PowerPAK® 1212-8
Vgs (Max)：
±12V
Vgs(th) (Max) @ Id：
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
27 nC @ 4.5 V
Current - Continuous Drain (Id) @ 25°C：
11.3A (Tc)
Rds On (Max) @ Id, Vgs：
7.5mOhm @ 17.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
2610 pF @ 15 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：14893
quantity
unit price
International prices
3000
0.84
2520
6000
0.8
4800
9000
0.78
7020
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