SI7114DN-T1-GE3
MOSFET N-CH 30V 11.7A PPAK1212-8
part Number:
SI7114DN-T1-GE3
Alternative Model:
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 30V 11.7A PPAK1212-8
RoHS:
YES
SI7114DN-T1-GE3 specifications
Mounting Type:
Surface Mount
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Operating Temperature:
-55°C ~ 150°C (TJ)
Power Dissipation (Max):
1.5W (Ta)
Drain to Source Voltage (Vdss):
30 V
Vgs(th) (Max) @ Id:
3V @ 250µA
Supplier Device Package:
PowerPAK® 1212-8
Package / Case:
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 4.5 V
Current - Continuous Drain (Id) @ 25°C:
11.7A (Ta)
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 18.3A, 10V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
quantity
unit price
International prices
3000
0.84
2520
6000
0.8
4800
9000
0.78
7020
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