SI6463BDQ-T1-GE3
MOSFET P-CH 20V 6.2A 8-TSSOP
part Number：
SI6463BDQ-T1-GE3
Alternative Model：
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 20V 6.2A 8-TSSOP
RoHS：
YES
SI6463BDQ-T1-GE3 specifications
Mounting Type：
Surface Mount
Package / Case：
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：
8-TSSOP
Technology：
MOSFET (Metal Oxide)
FET Type：
P-Channel
Drain to Source Voltage (Vdss)：
20 V
Vgs(th) (Max) @ Id：
800mV @ 250µA
Current - Continuous Drain (Id) @ 25°C：
6.2A (Ta)
Gate Charge (Qg) (Max) @ Vgs：
60 nC @ 5 V
Rds On (Max) @ Id, Vgs：
15mOhm @ 7.4A, 4.5V
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Standard Pack Quantity：1600
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