IPD16CN10N G
MOSFET N-CH 100V 53A TO252-3
part Number：
IPD16CN10N G
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 100V 53A TO252-3
RoHS：
NO
IPD16CN10N G specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Power Dissipation (Max)：
100W (Tc)
Supplier Device Package：
PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs：
48 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
53A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
3220 pF @ 50 V
Vgs(th) (Max) @ Id：
4V @ 61µA
Rds On (Max) @ Id, Vgs：
16mOhm @ 53A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
2500
0.76
1900
5000
0.73
3650
12500
0.7
8750
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