IPI80N06S207AKSA1
MOSFET N-CH 55V 80A TO262-3
part Number:
IPI80N06S207AKSA1
manufacturer:
IR (Infineon Technologies)
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 55V 80A TO262-3
RoHS:
YES
IPI80N06S207AKSA1 specifications
Mounting Type:
Through Hole
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
10V
Operating Temperature:
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss):
55 V
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Rds On (Max) @ Id, Vgs:
6.6mOhm @ 68A, 10V
Vgs(th) (Max) @ Id:
4V @ 180µA
Power Dissipation (Max):
250W (Tc)
Supplier Device Package:
PG-TO262-3
Input Capacitance (Ciss) (Max) @ Vds:
3400 pF @ 25 V
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Standard Pack Quantity:1600
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