IPP023N04NGXKSA1
MOSFET N-CH 40V 90A TO220-3
part Number:
IPP023N04NGXKSA1
Alternative Model:
IRS10752LTRPBF  ,  1EDI60N12AFXUMA1  ,  1ED44173N01BXTSA1  ,  IRS21271STRPBF  ,  IRS4427STRPBF  ,  2ED2184S06FXUMA1  ,  2EDL23N06PJXUMA1  ,  2ED2110S06MXUMA1  ,  IRLML0030TRPBF  ,  IRF2804PBF  ,  IR2110STRPBF  ,  IRF3710PBF  ,  IR2110PBF
manufacturer:
IR (Infineon Technologies)
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 40V 90A TO220-3
RoHS:
YES
IPP023N04NGXKSA1 specifications
Mounting Type:
Through Hole
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
10V
Package / Case:
TO-220-3
Operating Temperature:
-55°C ~ 175°C (TJ)
Power Dissipation (Max):
167W (Tc)
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Supplier Device Package:
PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs:
120 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:
4V @ 95µA
Input Capacitance (Ciss) (Max) @ Vds:
10000 pF @ 20 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
quantity
unit price
International prices
1
2.71
2.71
50
2.18
109
100
1.79
179
500
1.52
760
1000
1.29
1290
2000
1.22
2440
5000
1.18
5900
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