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IPP12CN10LGXKSA1
MOSFET N-CH 100V 69A TO220-3
part Number：
IPP12CN10LGXKSA1
Alternative Model：
FA-T220-25E  ,  MCU30P06Y-TP  ,  IRFB4410ZPBF  ,  CSD19533KCS  ,  SUP50020EL-GE3  ,  ANT11SF1CQE  ,  TLE8366EVXUMA1  ,  STP40NF10L  ,  50M030050N012  ,  PSMN013-100PS  ,  127  ,  IPD122N10N3GATMA1  ,  EG1271A  ,  1EDN7512BXTSA1  ,  IRS10752LTRPBF  ,  1ED44173N01BXTSA1  ,  IRS2011STRPBF  ,  IRS21271STRPBF  ,  IRS4427STRPBF  ,  2ED2184S06FXUMA1  ,  2EDL23N06PJXUMA1  ,  2ED2110S06MXUMA1
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET N-CH 100V 69A TO220-3
RoHS：
YES
：
IPP12CN10LGXKSA1     IPP12CN10LGXKSA1    
IPP12CN10LGXKSA1 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Package / Case：
TO-220-3
Operating Temperature：
-55°C ~ 175°C (TJ)
Power Dissipation (Max)：
125W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
58 nC @ 10 V
Supplier Device Package：
PG-TO220-3
Current - Continuous Drain (Id) @ 25°C：
69A (Tc)
Vgs(th) (Max) @ Id：
2.4V @ 83µA
Input Capacitance (Ciss) (Max) @ Vds：
5600 pF @ 50 V
Rds On (Max) @ Id, Vgs：
12mOhm @ 69A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2486
quantity
unit price
International prices
1
2.11
2.11
50
1.71
85.5
100
1.4
140
500
1.19
595
1000
1
1000
2000
0.96
1920
5000
0.91
4550
10000
0.89
8900
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