IPP50R199CPXKSA1
MOSFET N-CH 550V 17A TO220-3
part Number：
IPP50R199CPXKSA1
Alternative Model：
STP20NK50Z , MUR860G
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 550V 17A TO220-3
RoHS：
YES
IPP50R199CPXKSA1 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-220-3
Gate Charge (Qg) (Max) @ Vgs：
45 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
17A (Tc)
Supplier Device Package：
PG-TO220-3-1
Rds On (Max) @ Id, Vgs：
199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id：
3.5V @ 660µA
Power Dissipation (Max)：
139W (Tc)
Drain to Source Voltage (Vdss)：
550 V
Input Capacitance (Ciss) (Max) @ Vds：
1800 pF @ 100 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2076
quantity
unit price
International prices
1
3.74
3.74
50
2.96
148
100
2.54
254
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