IPP90R1K2C3XKSA1
MOSFET N-CH 900V 5.1A TO220-3
part Number：
IPP90R1K2C3XKSA1
Alternative Model：
IPP90R1K2C3XKSA2
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 900V 5.1A TO220-3
RoHS：
YES
IPP90R1K2C3XKSA1 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-220-3
Gate Charge (Qg) (Max) @ Vgs：
28 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
5.1A (Tc)
Power Dissipation (Max)：
83W (Tc)
Supplier Device Package：
PG-TO220-3
Drain to Source Voltage (Vdss)：
900 V
Input Capacitance (Ciss) (Max) @ Vds：
710 pF @ 100 V
Rds On (Max) @ Id, Vgs：
1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id：
3.5V @ 310µA
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Standard Pack Quantity：1600
quantity
unit price
International prices
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