IPW50R199CPFKSA1
MOSFET N-CH 550V 17A TO247-3
part Number：
IPW50R199CPFKSA1
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 550V 17A TO247-3
RoHS：
NO
IPW50R199CPFKSA1 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs：
45 nC @ 10 V
Package / Case：
TO-247-3
Current - Continuous Drain (Id) @ 25°C：
17A (Tc)
Supplier Device Package：
PG-TO247-3-1
Rds On (Max) @ Id, Vgs：
199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id：
3.5V @ 660µA
Power Dissipation (Max)：
139W (Tc)
Drain to Source Voltage (Vdss)：
550 V
Input Capacitance (Ciss) (Max) @ Vds：
1800 pF @ 100 V
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Standard Pack Quantity：1600
quantity
unit price
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