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IPD600N25N3GBTMA1
MOSFET N-CH 250V 25A TO252-3
part Number：
IPD600N25N3GBTMA1
Alternative Model：
IPD600N25N3GATMA1  ,  FDC5614P  ,  NTR4101PT1G  ,  MMBF170  ,  XC6124E628MR-G  ,  MMBTA56  ,  NCV5501DT33RKG  ,  FCPF190N60  ,  FDD120AN15A0  ,  DC1018B-B  ,  RO-3.305S/EH  ,  M41T93RQA6F  ,  ACS713ELCTR-20A-T  ,  ACS712ELCTR-20A-T
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET N-CH 250V 25A TO252-3
RoHS：
NO
：
IPD600N25N3GBTMA1     IPD600N25N3GBTMA1     IPD600N25N3GBTMA1     IPD600N25N3GBTMA1    
IPD600N25N3GBTMA1 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)：
250 V
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C：
25A (Tc)
Rds On (Max) @ Id, Vgs：
60mOhm @ 25A, 10V
Supplier Device Package：
PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs：
29 nC @ 10 V
Power Dissipation (Max)：
136W (Tc)
Vgs(th) (Max) @ Id：
4V @ 90µA
Input Capacitance (Ciss) (Max) @ Vds：
2350 pF @ 100 V
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Standard Pack Quantity：1600
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