SI7997DP-T1-GE3

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SI7997DP-T1-GE3

MOSFET 2P-CH 30V 60A PPAK SO8

part Number：

SI7997DP-T1-GE3

Alternative Model：

AONR21321,BAT54XV2T1G,NX3020NAKW,115,MPZ2012S102AT000,MX25L8006EM1I-12G,ESDA25P35-1U1M,9774050151R,APHHS1005SURCK,RT7276GQW,TPS3700DSER,XPH3R114MC,L1XHQ,PSMN075-100MSEX,TPS65987DDHRSHR,FT4232H-56Q-TRAY,SI7613DN-T1-GE3

manufacturer：

Vishay / Siliconix

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET 2P-CH 30V 60A PPAK SO8

RoHS：

YES

：

SI7997DP-T1-GE3 SI7997DP-T1-GE3 SI7997DP-T1-GE3

SI7997DP-T1-GE3 specifications

Mounting Type：

Surface Mount

Technology：

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)：

30V

Operating Temperature：

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id：

2.2V @ 250µA

Configuration：

2 P-Channel (Dual)

Package / Case：

PowerPAK® SO-8 Dual

Supplier Device Package：

PowerPAK® SO-8 Dual

Rds On (Max) @ Id, Vgs：

5.5mOhm @ 20A, 10V

Current - Continuous Drain (Id) @ 25°C：

60A

Power - Max：

46W

Input Capacitance (Ciss) (Max) @ Vds：

6200pF @ 15V

Gate Charge (Qg) (Max) @ Vgs：

160nC @ 10V

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Quick inquiry

Manufacturer's standard delivery time：be pending

Standard Pack Quantity：16967

quantity

unit price

International prices

3000

1.05

3150

6000

1.01

6060

9000

0.98

8820

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