IRLHS6376TRPBF

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IRLHS6376TRPBF

MOSFET 2N-CH 30V 3.6A 6PQFN

part Number：

IRLHS6376TRPBF

Alternative Model：

IRLHS6376TR2PBF , IRS2005STRPBF , IRS10752LTRPBF , 1ED44173N01BXTSA1 , IRS2011STRPBF , 6EDL04N02PRXUMA1 , IRS21271STRPBF , IRS4427STRPBF , 2EDL23N06PJXUMA1 , MOSFET2-KIT , SSM6N58NU , LF , SIA931DJ-T1-GE3 , SIT9201AC-S3-18E-50.000000G , BSZ146N10LS5ATMA1 , IRLHS6276TRPBF , RCLAMP0512TQTNT , CDBZC0130R-HF , AT24C01D-SSHM-T , BSS138PW , 115 , IRLML6346TRPBF , SKSCPBE010 , DMP21D5UFB4-7B , 5054332051 , WLC1115-68LQXQ , SI7223DN-T1-GE3

manufacturer：

IR (Infineon Technologies)

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET 2N-CH 30V 3.6A 6PQFN

RoHS：

YES

：

IRLHS6376TRPBF IRLHS6376TRPBF IRLHS6376TRPBF

IRLHS6376TRPBF specifications

Mounting Type：

Surface Mount

Technology：

MOSFET (Metal Oxide)

FET Feature：

Logic Level Gate

Drain to Source Voltage (Vdss)：

30V

Operating Temperature：

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id：

1.1V @ 10µA

Configuration：

2 N-Channel (Dual)

Power - Max：

1.5W

Package / Case：

6-PowerVDFN

Current - Continuous Drain (Id) @ 25°C：

3.6A

Gate Charge (Qg) (Max) @ Vgs：

2.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds：

270pF @ 25V

Rds On (Max) @ Id, Vgs：

63mOhm @ 3.4A, 4.5V

Supplier Device Package：

6-PQFN Dual (2x2)

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Quick inquiry

Manufacturer's standard delivery time：be pending

Standard Pack Quantity：141077

quantity

unit price

International prices

4000

0.23

920

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