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SI7860DP-T1-E3
MOSFET N-CH 30V 11A PPAK SO-8
part Number：
SI7860DP-T1-E3
Alternative Model：
CPPLC7L-A7BP-50.0TS  ,  CTLTVS5-4 TR PBFREE  ,  LSF0108PWR  ,  FDMS7660AS  ,  ASP-103612-02  ,  ABM2-25.000MHZ-D4Y-T  ,  SIR462DP-T1-GE3  ,  MAX9406ETM+  ,  ABS06-107-32.768KHZ-T  ,  TXS0108EPWR  ,  EMC1412-1-ACZL-TR  ,  FDN358P  ,  MMBT3904-7-F
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET N-CH 30V 11A PPAK SO-8
RoHS：
YES
：
SI7860DP-T1-E3     SI7860DP-T1-E3    
SI7860DP-T1-E3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
30 V
Vgs(th) (Max) @ Id：
3V @ 250µA
Power Dissipation (Max)：
1.8W (Ta)
Supplier Device Package：
PowerPAK® SO-8
Package / Case：
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C：
11A (Ta)
Gate Charge (Qg) (Max) @ Vgs：
18 nC @ 4.5 V
Rds On (Max) @ Id, Vgs：
8mOhm @ 18A, 10V
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