SI7909DN-T1-E3

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SI7909DN-T1-E3

MOSFET 2P-CH 12V 5.3A PPAK 1212

part Number：

SI7909DN-T1-E3

manufacturer：

Vishay / Siliconix

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET 2P-CH 12V 5.3A PPAK 1212

RoHS：

YES

SI7909DN-T1-E3 specifications

Mounting Type：

Surface Mount

Technology：

MOSFET (Metal Oxide)

FET Feature：

Logic Level Gate

Operating Temperature：

-55°C ~ 150°C (TJ)

Configuration：

2 P-Channel (Dual)

Drain to Source Voltage (Vdss)：

12V

Power - Max：

1.3W

Current - Continuous Drain (Id) @ 25°C：

5.3A

Package / Case：

PowerPAK® 1212-8 Dual

Supplier Device Package：

PowerPAK® 1212-8 Dual

Gate Charge (Qg) (Max) @ Vgs：

24nC @ 4.5V

Rds On (Max) @ Id, Vgs：

37mOhm @ 7.7A, 4.5V

Vgs(th) (Max) @ Id：

1V @ 700µA

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Standard Pack Quantity：1600

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