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NP100P04PDG-E1-AY
MOSFET P-CH 40V 100A TO263
part Number：
NP100P04PDG-E1-AY
Alternative Model：
NP16N06QLK-E1-AY  ,  SUM110P08-11L-E3  ,  1-796692-2  ,  NP100P04PLG-E1-AY  ,  220ADC04  ,  TJ200F04M3L  ,  LXHQ  ,  54202-G0810LF  ,  796692-2  ,  5002  ,  CMD17-21VRD/TR8  ,  0393900102  ,  CMD17-21VGD/TR8  ,  CMD17-21VYD/TR8  ,  NP100P06PDG-E1-AY
manufacturer：
Intersil (Renesas Electronics Corporation)
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET P-CH 40V 100A TO263
RoHS：
YES
：
NP100P04PDG-E1-AY    
NP100P04PDG-E1-AY specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
40 V
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Current - Continuous Drain (Id) @ 25°C：
100A (Tc)
FET Type：
P-Channel
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Operating Temperature：
175°C (TJ)
Vgs(th) (Max) @ Id：
2.5V @ 1mA
Supplier Device Package：
TO-263
Rds On (Max) @ Id, Vgs：
3.5mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs：
320 nC @ 10 V
Power Dissipation (Max)：
1.8W (Ta), 200W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
15100 pF @ 10 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：3153
quantity
unit price
International prices
800
3.45
2760
1600
2.95
4720
2400
2.78
6672
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