NP100P06PDG-E1-AY
MOSFET P-CH 60V 100A TO263
part Number:
NP100P06PDG-E1-AY
Alternative Model:
SUM110P06-07L-E3  ,  NP100P06PLG-E1-AY  ,  GSFT06130  ,  SQM120P06-07L_GE3  ,  NP100P04PDG-E1-AY  ,  LTM4644IY#PBF  ,  AX3DAF1-100.0000  ,  SUM110P06-08L-E3  ,  IPB110P06LMATMA1  ,  BLM31SN500SN1L  ,  PMV28UNEAR  ,  OPA140AIDBVT  ,  2N7002ET1G  ,  NP83P06PDG-E1-AY  ,  BSH205G2R
manufacturer:
Intersil (Renesas Electronics Corporation)
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET P-CH 60V 100A TO263
RoHS:
YES
NP100P06PDG-E1-AY specifications
Mounting Type:
Surface Mount
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
FET Type:
P-Channel
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Operating Temperature:
175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs:
300 nC @ 10 V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Supplier Device Package:
TO-263
Rds On (Max) @ Id, Vgs:
6mOhm @ 50A, 10V
Power Dissipation (Max):
1.8W (Ta), 200W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
15000 pF @ 10 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:2398
quantity
unit price
International prices
800
3.44
2752
1600
2.95
4720
2400
2.77
6648
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