NP23N06YDG-E1-AY

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NP23N06YDG-E1-AY

MOSFET N-CH 60V 23A 8HSON

part Number：

NP23N06YDG-E1-AY

Alternative Model：

RJK0658DPA-00#J5A

manufacturer：

Intersil (Renesas Electronics Corporation)

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >

describe：

MOSFET N-CH 60V 23A 8HSON

RoHS：

YES

：

NP23N06YDG-E1-AY NP23N06YDG-E1-AY

NP23N06YDG-E1-AY specifications

Mounting Type：

Surface Mount

Package / Case：

8-SMD, Flat Lead Exposed Pad

FET Type：

N-Channel

Technology：

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)：

60 V

Vgs (Max)：

±20V

Vgs(th) (Max) @ Id：

2.5V @ 250µA

Operating Temperature：

175°C (TJ)

Current - Continuous Drain (Id) @ 25°C：

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)：

5V, 10V

Gate Charge (Qg) (Max) @ Vgs：

41 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds：

1800 pF @ 25 V

Supplier Device Package：

8-HSON

Rds On (Max) @ Id, Vgs：

27mOhm @ 11.5A, 10V

Power Dissipation (Max)：

1W (Ta), 60W (Tc)

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Quick inquiry

Manufacturer's standard delivery time：be pending

Standard Pack Quantity：9100

quantity

unit price

International prices

2500

0.61

1525

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