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NP36P06SLG-E1-AY
MOSFET P-CH 60V 36A TO252
part Number：
NP36P06SLG-E1-AY
Alternative Model：
STD35P6LLF6  ,  IPBT-110-H1-T-D-RA-K  ,  NP36P06KDG-E1-AY  ,  IPBD-10-D-K  ,  EEH-ZK1E470R  ,  1864341  ,  BTN8962TAAUMA1  ,  24452  ,  LD1117S50CTR  ,  3220-10-0100-00  ,  FH1600015  ,  282841-2  ,  MMBT2222ALT1G  ,  7914J-1-000E  ,  1825910-6
manufacturer：
Intersil (Renesas Electronics Corporation)
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET P-CH 60V 36A TO252
RoHS：
YES
：
NP36P06SLG-E1-AY    
NP36P06SLG-E1-AY specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
60 V
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
FET Type：
P-Channel
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Operating Temperature：
175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs：
52 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
36A (Tc)
Supplier Device Package：
TO-252 (MP-3ZK)
Input Capacitance (Ciss) (Max) @ Vds：
3200 pF @ 10 V
Power Dissipation (Max)：
1.2W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs：
30mOhm @ 18A, 10V
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Manufacturer's standard delivery time：be pending
Standard Pack Quantity：10315
quantity
unit price
International prices
2500
0.84
2100
5000
0.8
4000
12500
0.78
9750
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