NP50P04KDG-E1-AY

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NP50P04KDG-E1-AY

MOSFET P-CH 40V 50A TO263

part Number：

NP50P04KDG-E1-AY

Alternative Model：

VX7805-500 , XC6227C331PR-G , NP36P04KDG-E1-AY , NP50P06KDG-E1-AY , ADUM7642ARQZ-RL7 , ABM8G-106-12.000MHZ-T , ADS7957QDBTRQ1 , S25FL064LABNFI043 , LTV-846S , 50PEV100M10X10.5 , SM712-TP , LM4132CMF-2.5/NOPB , 3412.0121.22 , IPB110P06LMATMA1 , SUM90P10-19L-E3

manufacturer：

Intersil (Renesas Electronics Corporation)

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >

describe：

MOSFET P-CH 40V 50A TO263

RoHS：

YES

：

NP50P04KDG-E1-AY NP50P04KDG-E1-AY NP50P04KDG-E1-AY

NP50P04KDG-E1-AY specifications

Mounting Type：

Surface Mount

Technology：

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)：

40 V

Drive Voltage (Max Rds On, Min Rds On)：

4.5V, 10V

Vgs (Max)：

±20V

FET Type：

P-Channel

Package / Case：

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Operating Temperature：

175°C (TJ)

Vgs(th) (Max) @ Id：

2.5V @ 1mA

Current - Continuous Drain (Id) @ 25°C：

50A (Tc)

Gate Charge (Qg) (Max) @ Vgs：

100 nC @ 10 V

Supplier Device Package：

TO-263

Rds On (Max) @ Id, Vgs：

10mOhm @ 25A, 10V

Input Capacitance (Ciss) (Max) @ Vds：

5100 pF @ 10 V

Power Dissipation (Max)：

1.8W (Ta), 90W (Tc)

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Quick inquiry

Manufacturer's standard delivery time：be pending

Standard Pack Quantity：4662

quantity

unit price

International prices

800

1.84

1472

1600

1.57

2512

2400

1.49

3576

5600

1.43

8008

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