STB6N62K3
MOSFET N-CH 620V 5.5A D2PAK
STB6N62K3 specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs (Max)：
±30V
Supplier Device Package：
TO-263 (D2PAK)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs：
34 nC @ 10 V
Vgs(th) (Max) @ Id：
4.5V @ 50µA
Current - Continuous Drain (Id) @ 25°C：
5.5A (Tc)
Power Dissipation (Max)：
90W (Tc)
Drain to Source Voltage (Vdss)：
620 V
Rds On (Max) @ Id, Vgs：
1.2Ohm @ 2.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
875 pF @ 50 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
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