TK12A55D(STA4,Q,M)
MOSFET N-CH 550V 12A TO220SIS
part Number:
TK12A55D(STA4,Q,M)
manufacturer:
Toshiba Electronic Devices and Storage Corporation
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 550V 12A TO220SIS
RoHS:
YES
TK12A55D(STA4,Q,M) specifications
Mounting Type:
Through Hole
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
10V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
28 nC @ 10 V
Package / Case:
TO-220-3 Full Pack
Vgs(th) (Max) @ Id:
4V @ 1mA
Supplier Device Package:
TO-220SIS
Power Dissipation (Max):
45W (Tc)
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1550 pF @ 25 V
Drain to Source Voltage (Vdss):
550 V
Rds On (Max) @ Id, Vgs:
570mOhm @ 6A, 10V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
quantity
unit price
International prices
1
2.92
2.92
50
2.34
117
100
1.93
193
500
1.63
815
1000
1.39
1390
2000
1.32
2640
5000
1.27
6350
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