TK2A65D(STA4,Q,M)
MOSFET N-CH 650V 2A TO220SIS
part Number：
TK2A65D(STA4,Q,M)
Alternative Model：
TK3R1E04PL , S1X
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 650V 2A TO220SIS
RoHS：
YES
TK2A65D(STA4,Q,M) specifications
Mounting Type：
Through Hole
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs (Max)：
±30V
Drain to Source Voltage (Vdss)：
650 V
Package / Case：
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs：
9 nC @ 10 V
Power Dissipation (Max)：
30W (Tc)
Supplier Device Package：
TO-220SIS
Current - Continuous Drain (Id) @ 25°C：
2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds：
380 pF @ 25 V
Vgs(th) (Max) @ Id：
4.4V @ 1mA
Rds On (Max) @ Id, Vgs：
3.26Ohm @ 1A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1650
quantity
unit price
International prices
1
1.53
1.53
50
1.22
61
100
0.97
97
500
0.83
415
1000
0.67
670
2000
0.63
1260
5000
0.61
3050
10000
0.57
5700
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