TK7A65D(STA4,Q,M)
MOSFET N-CH 650V 7A TO220SIS
part Number：
TK7A65D(STA4,Q,M)
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 650V 7A TO220SIS
RoHS：
YES
TK7A65D(STA4,Q,M) specifications
Mounting Type：
Through Hole
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs (Max)：
±30V
Drain to Source Voltage (Vdss)：
650 V
Gate Charge (Qg) (Max) @ Vgs：
24 nC @ 10 V
Package / Case：
TO-220-3 Full Pack
Input Capacitance (Ciss) (Max) @ Vds：
1200 pF @ 25 V
Vgs(th) (Max) @ Id：
4V @ 1mA
Supplier Device Package：
TO-220SIS
Power Dissipation (Max)：
45W (Tc)
Current - Continuous Drain (Id) @ 25°C：
7A (Ta)
Rds On (Max) @ Id, Vgs：
980mOhm @ 3.5A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1640
quantity
unit price
International prices
1
2.28
2.28
50
1.83
91.5
100
1.51
151
500
1.28
640
1000
1.08
1080
2000
1.02
2040
5000
0.99
4950
10000
0.98
9800
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