TK8A55DA(STA4,Q,M)
MOSFET N-CH 550V 7.5A TO220SIS
part Number：
TK8A55DA(STA4,Q,M)
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 550V 7.5A TO220SIS
RoHS：
YES
TK8A55DA(STA4,Q,M) specifications
Mounting Type：
Through Hole
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs (Max)：
±30V
Package / Case：
TO-220-3 Full Pack
Vgs(th) (Max) @ Id：
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds：
800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：
16 nC @ 10 V
Supplier Device Package：
TO-220SIS
Current - Continuous Drain (Id) @ 25°C：
7.5A (Ta)
Power Dissipation (Max)：
40W (Tc)
Drain to Source Voltage (Vdss)：
550 V
Rds On (Max) @ Id, Vgs：
1.07Ohm @ 3.8A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1648
quantity
unit price
International prices
1
1.82
1.82
50
1.46
73
100
1.2
120
500
1.01
505
1000
0.86
860
2000
0.83
1660
5000
0.79
3950
10000
0.79
7900
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