RJK6015DPM-00#T1
MOSFET N-CH 600V 21A TO3PFM
part Number：
RJK6015DPM-00#T1
Alternative Model：
TK39N60W5,S1VF
manufacturer：
Intersil (Renesas Electronics Corporation)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 600V 21A TO3PFM
RoHS：
YES
RJK6015DPM-00#T1 specifications
Mounting Type：
Through Hole
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs (Max)：
±30V
Drain to Source Voltage (Vdss)：
600 V
Package / Case：
TO-220-3 Full Pack
Power Dissipation (Max)：
60W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
2600 pF @ 25 V
Supplier Device Package：
TO-3PFM
Current - Continuous Drain (Id) @ 25°C：
21A (Ta)
Rds On (Max) @ Id, Vgs：
360mOhm @ 10.5A, 10V
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Standard Pack Quantity：1600
quantity
unit price
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