2N6800
MOSFET N-CH 400V 3A TO39
part Number:
2N6800
Alternative Model:
manufacturer:
Microsemi Corporation
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 400V 3A TO39
RoHS:
NO
2N6800 specifications
Mounting Type:
Through Hole
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
10V
Operating Temperature:
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
400 V
Supplier Device Package:
TO-39
Package / Case:
TO-205AF Metal Can
Power Dissipation (Max):
800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs:
1Ohm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
5.75 nC @ 10 V
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Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
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