2N6849
MOSFET P-CH 100V 6.5A TO39
part Number：
2N6849
Alternative Model：
2N3700,TCM3105NL,VAOL-S12GT4,5973001202NF,2N2222A,1N4976,BYW29-200G,2N2907A PBFREE,V82RA16,MMPQ2222A
manufacturer：
Microsemi Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 100V 6.5A TO39
RoHS：
NO
2N6849 specifications
Mounting Type：
Through Hole
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Vgs(th) (Max) @ Id：
4V @ 250µA
Supplier Device Package：
TO-39
Package / Case：
TO-205AF Metal Can
Current - Continuous Drain (Id) @ 25°C：
6.5A (Tc)
Power Dissipation (Max)：
800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs：
320mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs：
34.8 nC @ 10 V
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Standard Pack Quantity：1600
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