IXTT10N100D2
MOSFET N-CH 1000V 10A TO268
part Number：
IXTT10N100D2
Alternative Model：
IXTT16N50D2,IXTT16N20D2
manufacturer：
Littelfuse / IXYS RF
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 1000V 10A TO268
RoHS：
YES
IXTT10N100D2 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
1000 V
Current - Continuous Drain (Id) @ 25°C：
10A (Tc)
FET Feature：
Depletion Mode
Power Dissipation (Max)：
695W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
5320 pF @ 25 V
Package / Case：
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package：
TO-268AA
Rds On (Max) @ Id, Vgs：
1.5Ohm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs：
200 nC @ 5 V
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Standard Pack Quantity：1600
quantity
unit price
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