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Resistors
Capacitors
Inductors, Coils, Chokes
Discrete Semiconductor Products
Accessories
Specialized Resistors
Silicon Capacitors
Fixed Inductors
Adjustable Inductors
Arrays, Signal Transformers
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home page >
CLASSIFICATION >
Classification List >
product details
MIEB101H1200EH
IGBT MODULE 1200V 183A 630W E3
part Number:
MIEB101H1200EH
Alternative Model:
VS-GT75YF120UT,VS-GT75YF120NT,VS-GT50YF120NT,IM241S6T2BAKMA1,FP35R12KT4BPSA1,FP40R12KT3BPSA1,FF450R12KT4HOSA1,VS-GT55NA120UX,FS150R12KE3BOSA1,FF150R12RT4HOSA1,APT75GN120JDQ3
manufacturer:
Littelfuse / IXYS RF
category:
Discrete Semiconductor Products
>
Transistors
>
IGBTs
>
IGBT Modules
>
describe:
IGBT MODULE 1200V 183A 630W E3
RoHS:
YES
:
MIEB101H1200EH
MIEB101H1200EH
MIEB101H1200EH specifications
Mounting Type:
Chassis Mount
Operating Temperature:
-40°C ~ 125°C (TJ)
Voltage - Collector Emitter Breakdown (Max):
1200 V
Input:
Standard
NTC Thermistor:
No
Package / Case:
E3
Supplier Device Package:
E3
Configuration:
Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 100A
Current - Collector Cutoff (Max):
300 µA
Input Capacitance (Cies) @ Vce:
7.43 nF @ 25 V
Power - Max:
630 W
Current - Collector (Ic) (Max):
183 A
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Standard Pack Quantity:1600
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