C2M1000170D
SICFET N-CH 1700V 4.9A TO247-3
part Number：
C2M1000170D
Alternative Model：
MGJ2D121505SC , MGJ2D241505SC , MGJ2D051505SC , MGJ3T12150505MC-R7 , MGJ2D151505SC , MGJ3T24150505MC-R7 , MGJ3T05150505MC-R7 , MGJ3T12150505MC-R13 , MGJ3T24150505MC-R13 , MGJ3T05150505MC-R13 , C2M1000170J , G2R1000MT17D , SICW1000N170A-BP , IXTH2N170D2 , MSC750SMA170B , WA-T247-101E , DN2540N5-G , MSC750SMA170B4 , C3M0120065K , IXDN609SI , UF3C065030K3S , 2N2222A , BZT52C20TQ-7-F , ACNT-H79A-500E , UCC28C43QDRQ1
manufacturer：
Wolfspeed
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
SICFET N-CH 1700V 4.9A TO247-3
RoHS：
YES
C2M1000170D specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-247-3
Supplier Device Package：
TO-247-3
Drive Voltage (Max Rds On, Min Rds On)：
20V
Technology：
SiCFET (Silicon Carbide)
Vgs (Max)：
+25V, -10V
Vgs(th) (Max) @ Id：
4V @ 500µA
Power Dissipation (Max)：
69W (Tc)
Drain to Source Voltage (Vdss)：
1700 V
Current - Continuous Drain (Id) @ 25°C：
4.9A (Tc)
Rds On (Max) @ Id, Vgs：
1.1Ohm @ 2A, 20V
Gate Charge (Qg) (Max) @ Vgs：
13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds：
191 pF @ 1000 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2269
quantity
unit price
International prices
1
12.51
12.51
30
9.99
299.7
120
8.93
1071.6
510
7.89
4023.9
1020
7.1
7242
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