C2M0160120D
SICFET N-CH 1200V 19A TO247-3
part Number：
C2M0160120D
Alternative Model：
C2M0040120D , C2M0280120D , C2M0080120D , IXFH40N85X , 20021221-00060T4LF , 03540101ZXGY , C3D16065D , C3M0120065K , C3M0120065D , C2M0025120D , 150060RS75000 , RP-1212D , MMSZ5253C-E3-08 , NTHL160N120SC1 , C3M0040120D , MGJ2D121505SC , MGJ2D241505SC , MGJ2D051505SC , MGJ3T12150505MC-R7 , MGJ2D151505SC , MGJ3T24150505MC-R7 , MGJ3T05150505MC-R7 , MGJ3T12150505MC-R13 , MGJ3T24150505MC-R13 , MGJ3T05150505MC-R13
manufacturer：
Wolfspeed
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
SICFET N-CH 1200V 19A TO247-3
RoHS：
YES
C2M0160120D specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-247-3
Supplier Device Package：
TO-247-3
Power Dissipation (Max)：
125W (Tc)
Drain to Source Voltage (Vdss)：
1200 V
Drive Voltage (Max Rds On, Min Rds On)：
20V
Technology：
SiCFET (Silicon Carbide)
Vgs (Max)：
+25V, -10V
Current - Continuous Drain (Id) @ 25°C：
19A (Tc)
Vgs(th) (Max) @ Id：
2.5V @ 500µA
Rds On (Max) @ Id, Vgs：
196mOhm @ 10A, 20V
Gate Charge (Qg) (Max) @ Vgs：
32.6 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds：
527 pF @ 800 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：3324
quantity
unit price
International prices
1
17.5
17.5
30
14.17
425.1
120
13.33
1599.6
510
12.08
6160.8
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