RQJ0303PGDQA#H6
MOSFET P-CH 30V 3.3A 3MPAK
part Number：
RQJ0303PGDQA#H6
Alternative Model：
TPD2E1B06DRLR,RQ6E035ATTCR,LTC6804IG-1#TRPBF,SN74LVC1G373DBVR,BAT46W-7-F,PCA9306DCTR
manufacturer：
Intersil (Renesas Electronics Corporation)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 30V 3.3A 3MPAK
RoHS：
YES
RQJ0303PGDQA#H6 specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
FET Type：
P-Channel
Package / Case：
TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss)：
30 V
Gate Charge (Qg) (Max) @ Vgs：
12 nC @ 10 V
Power Dissipation (Max)：
800mW (Ta)
Current - Continuous Drain (Id) @ 25°C：
3.3A (Ta)
Rds On (Max) @ Id, Vgs：
68mOhm @ 1.6A, 10V
Vgs (Max)：
+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds：
625 pF @ 10 V
Supplier Device Package：
3-MPAK
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Standard Pack Quantity：1600
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