IXYP20N65C3D1M
IGBT 650V 18A 50W TO220
part Number：
IXYP20N65C3D1M
Alternative Model：
manufacturer：
Littelfuse / IXYS RF
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
Single IGBTs >
describe：
IGBT 650V 18A 50W TO220
RoHS：
YES
IXYP20N65C3D1M specifications
Mounting Type：
Through Hole
Power - Max：
50 W
Package / Case：
TO-220-3
Operating Temperature：
-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr)：
30 ns
Input Type：
Standard
IGBT Type：
PT
Supplier Device Package：
TO-220-3
Voltage - Collector Emitter Breakdown (Max)：
650 V
Current - Collector (Ic) (Max)：
18 A
Gate Charge：
30 nC
Current - Collector Pulsed (Icm)：
105 A
Vce(on) (Max) @ Vge, Ic：
2.5V @ 15V, 20A
Test Condition：
400V, 20A, 20Ohm, 15V
Switching Energy：
430µJ (on), 350µJ (off)
Td (on/off) @ 25°C：
19ns/80ns
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Standard Pack Quantity：1600
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