PSMN8R5-108ESQ
MOSFET N-CH 108V 100A I2PAK
part Number：
PSMN8R5-108ESQ
Alternative Model：
manufacturer：
NXP Semiconductors
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 108V 100A I2PAK
RoHS：
YES
PSMN8R5-108ESQ specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
TO-262-3 Long Leads, I2PAK, TO-262AA
Vgs(th) (Max) @ Id：
4V @ 1mA
Supplier Device Package：
I2PAK
Current - Continuous Drain (Id) @ 25°C：
100A (Tj)
Rds On (Max) @ Id, Vgs：
8.5mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs：
111 nC @ 10 V
Power Dissipation (Max)：
263W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
5512 pF @ 50 V
Drain to Source Voltage (Vdss)：
108 V
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Standard Pack Quantity：1600
quantity
unit price
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