TPH5900CNH,L1Q
MOSFET N-CH 150V 9A 8SOP
part Number：
TPH5900CNH,L1Q
Alternative Model：
SQJ872EP-T1_GE3,BSZ900N15NS3GATMA1,TPS26601RHFT,SQSA70CENW-T1_GE3,TLP2372(TPL,E,TPH3300CNH,L1Q,LM43600PWPT,IPB060N15N5ATMA1,SIR510DP-T1-RE3,DMTH15H017SPS-13,TPH2900ENH,L1Q,NTMFS4C302NT1G,RB168MM200TFTR,7466205R,LM43601PWPT
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 150V 9A 8SOP
RoHS：
YES
TPH5900CNH,L1Q specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Package / Case：
8-PowerVDFN
Current - Continuous Drain (Id) @ 25°C：
9A (Ta)
Drain to Source Voltage (Vdss)：
150 V
Supplier Device Package：
8-SOP Advance (5x5)
Vgs(th) (Max) @ Id：
4V @ 200µA
Rds On (Max) @ Id, Vgs：
59mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs：
7 nC @ 10 V
Power Dissipation (Max)：
1.6W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
600 pF @ 75 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：15558
quantity
unit price
International prices
5000
0.41
2050
10000
0.41
4100
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