TPH5900CNH,L1Q
MOSFET N-CH 150V 9A 8SOP
part Number:
TPH5900CNH,L1Q
Alternative Model:
SQJ872EP-T1_GE3  ,  BSZ900N15NS3GATMA1  ,  TPS26601RHFT  ,  SQSA70CENW-T1_GE3  ,  TLP2372(TPL  ,  E  ,  TPH3300CNH  ,  L1Q  ,  LM43600PWPT  ,  IPB060N15N5ATMA1  ,  SIR510DP-T1-RE3  ,  DMTH15H017SPS-13  ,  TPH2900ENH  ,  L1Q  ,  NTMFS4C302NT1G  ,  RB168MM200TFTR  ,  7466205R  ,  LM43601PWPT
manufacturer:
Toshiba Electronic Devices and Storage Corporation
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 150V 9A 8SOP
RoHS:
YES
TPH5900CNH,L1Q specifications
Mounting Type:
Surface Mount
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
10V
Package / Case:
8-PowerVDFN
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Drain to Source Voltage (Vdss):
150 V
Supplier Device Package:
8-SOP Advance (5x5)
Vgs(th) (Max) @ Id:
4V @ 200µA
Rds On (Max) @ Id, Vgs:
59mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
7 nC @ 10 V
Power Dissipation (Max):
1.6W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
600 pF @ 75 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:15558
quantity
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