TPN1110ENH,L1Q
MOSFET N-CH 200V 7.2A 8TSON
part Number：
TPN1110ENH,L1Q
Alternative Model：
TPN2010FNH,L1Q,BSC027N10NS5ATMA1,BSZ900N20NS3GATMA1,BSC22DN20NS3GATMA1,ES2D
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 200V 7.2A 8TSON
RoHS：
YES
TPN1110ENH,L1Q specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Package / Case：
8-PowerVDFN
Current - Continuous Drain (Id) @ 25°C：
7.2A (Ta)
Drain to Source Voltage (Vdss)：
200 V
Supplier Device Package：
8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id：
4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs：
7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
600 pF @ 100 V
Power Dissipation (Max)：
700mW (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs：
114mOhm @ 3.6A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：36338
quantity
unit price
International prices
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0.7
3500
10000
0.67
6700
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