TPN2010FNH,L1Q
MOSFET N-CH 250V 5.6A 8TSON
part Number:
TPN2010FNH,L1Q
Alternative Model:
TPN1110ENH  ,  L1Q  ,  MJD31CH-QJ  ,  SK320B  ,  SI3127DV-T1-GE3  ,  BSZ42DN25NS3GATMA1  ,  LT1210CR#PBF  ,  A3950SEUTR-T  ,  SIA456DJ-T1-GE3  ,  150060RS75000  ,  SI7922DN-T1-E3  ,  BSS316NH6327XTSA1  ,  PUMT1  ,  115  ,  BGM220PC22HNA2  ,  MMPQ6700  ,  FTSH-105-01-L-DV-K-P
manufacturer:
Toshiba Electronic Devices and Storage Corporation
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 250V 5.6A 8TSON
RoHS:
YES
TPN2010FNH,L1Q specifications
Mounting Type:
Surface Mount
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
10V
Package / Case:
8-PowerVDFN
Drain to Source Voltage (Vdss):
250 V
Supplier Device Package:
8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id:
4V @ 200µA
Current - Continuous Drain (Id) @ 25°C:
5.6A (Ta)
Gate Charge (Qg) (Max) @ Vgs:
7 nC @ 10 V
Rds On (Max) @ Id, Vgs:
198mOhm @ 2.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
600 pF @ 100 V
Power Dissipation (Max):
700mW (Ta), 39W (Tc)
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:2555
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