TPN2010FNH,L1Q
MOSFET N-CH 250V 5.6A 8TSON
part Number：
TPN2010FNH,L1Q
Alternative Model：
TPN1110ENH,L1Q,MJD31CH-QJ,SK320B,SI3127DV-T1-GE3,BSZ42DN25NS3GATMA1,LT1210CR#PBF,A3950SEUTR-T,SIA456DJ-T1-GE3,150060RS75000,SI7922DN-T1-E3,BSS316NH6327XTSA1,PUMT1,115,BGM220PC22HNA2,MMPQ6700,FTSH-105-01-L-DV-K-P
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 250V 5.6A 8TSON
RoHS：
YES
TPN2010FNH,L1Q specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Package / Case：
8-PowerVDFN
Drain to Source Voltage (Vdss)：
250 V
Supplier Device Package：
8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id：
4V @ 200µA
Current - Continuous Drain (Id) @ 25°C：
5.6A (Ta)
Gate Charge (Qg) (Max) @ Vgs：
7 nC @ 10 V
Rds On (Max) @ Id, Vgs：
198mOhm @ 2.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
600 pF @ 100 V
Power Dissipation (Max)：
700mW (Ta), 39W (Tc)
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2555
quantity
unit price
International prices
5000
0.72
3600
10000
0.69
6900
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