TPN7R506NH,L1Q
MOSFET N-CH 60V 26A 8TSON
part Number：
TPN7R506NH,L1Q
Alternative Model：
TSR 2-2490,TPN11006PL,LQ,LM5109BSD/NOPB,AD8206YRZ,BR24L64F-WE2,LM74700QDDFRQ1,SIR680ADP-T1-RE3,SI3127DV-T1-GE3,SRF2012A-121YA,742792030,MAX491ESD+,DSPIC33EP256GM710-I/PT,V8PAM10HM3/I,PMEG2010ER-QX,MMFTP3401
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 60V 26A 8TSON
RoHS：
YES
TPN7R506NH,L1Q specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
60 V
Vgs (Max)：
±20V
Package / Case：
8-PowerVDFN
Supplier Device Package：
8-TSON Advance (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs：
22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
1800 pF @ 30 V
Current - Continuous Drain (Id) @ 25°C：
26A (Tc)
Vgs(th) (Max) @ Id：
4V @ 200µA
Drive Voltage (Max Rds On, Min Rds On)：
6.5V, 10V
Power Dissipation (Max)：
700mW (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs：
7.5mOhm @ 13A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：9320
quantity
unit price
International prices
5000
0.42
2100
10000
0.41
4100
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